High-Power CMOS RF Power Amplifier

Faculty: Bruce Wooley

Student: Maryam Fathi

Research Summary

CMOS is an attractive technology for integrating different RF blocks due to its low cost and high yield. However, designing power amplifiers in CMOS faces a lot of challenges including low breakdown voltage of the transistors and high loss of on-chip passive components. These problems become more significant in submicron CMOS processes. The objective of this research is to explore the design of efficient power amplifiers with high output power capability in CMOS.

Education

• Ph.D. Student, Electronic Engineering, Stanford University
• M.S., Electronic Engineering, Sharif University of Technology, Tehran, Iran, 2005
• B.S., Electrical Engineering, Sharif University of Technology, Tehran, Iran, 2003

Contact Information