High-Power CMOS RF Power Amplifier

Faculty: Bruce Wooley

Student: Maryam Fathi

Research Summary

CMOS is an attractive technology for integrating different RF blocks due to its low cost and high yield. However, designing power amplifiers with high output power in CMOS is challenging due to the low breakdown voltages of the transistors. The objective of this research is to explore the design of efficient power amplifiers with high output power capability in CMOS.

Publication

M. Fathi, D. K. Su, and B. A. Wooley, "A Stacked 6.5-GHz 29.6-dBm Power Amplifier in Standard 65-nm CMOS," IEEE Custom Integrated Circuits Conference, September 2010

M. Fathi, D. K. Su, and B. A. Wooley, "A 30.3dBm 1.9GHz-Bandwidth 2✕4-Array Stacked 5.3GHz CMOS Power Amplifier," IEEE International Solid-State Circuits Conference, February 2013

Education

Ph.D., Electrical Engineering, Stanford University, 2013
M.S., Electrical Engineering, Sharif University of Technology, Tehran, Iran, 2005
B.S., Electrical Engineering, Sharif University of Technology, Tehran, Iran, 2003

Contact Information

Email: fathi@alumni.stanford.edu

Integrated Circuits Lab

Center for Integrated Systems